Beatriz Galiana Blanco

Contacto

Despacho: 17.02.01

Teléfono: 916248552

Correo: cbaranda@hum.uc3m.es

Líneas de Investigación

Beatriz Galiana Blanco (Madrid 1977) es profesora de Física en la Universidad Carlos III de Madrid. Doctora en energía solar por la Universidad Politécnica de Madrid en 2006. Tiene más de cuarenta publicaciones científicas en revistas internacionales. Ha trabajo en universidades de EEUU, Alemania, Austria y México. Participa activamente en la vida política social desde la etapa universitaria. Diputada y Portavoz de Educación de Podemos de la X Legislatura en la Asamblea de Madrid. 

 

Publicaciones

Impact of Rotational Twin Boundaries and Lattice Mismatch on III-V Nanowire Growth. ACS Nano. 11:8679-8689. 2017
MOVPE growth of GaP on Si with As initial coverage. JOURNAL OF CRYSTAL GROWTH. 464:8-13. 2017


Comparison of Ti/Pd/Ag, Pd/Ti/Pd/Ag and Pd/Ge/Ti/Pd/Ag contacts to n-type GaAs for electronic devices handling high current densities. SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 32. 2017
Failure analysis on lattice matched GaInP/Ga(In)As/Ge commercial concentrator solar cells after temperature accelerated life tests. PROGRESS IN PHOTOVOLTAICS. 25:97-112. 2017


Self-organised silicide nanodot patterning by medium-energy ion beam sputtering of Si (100): local correlation between the morphology and metal content. NANOTECHNOLOGY. 27:1-27. 2016
Fast synthesis and bioconjugation of Ga-68 core-doped extremely small iron oxide nanoparticles for PET/MR imaging. Contrast Media & Molecular Imaging. 11:203-210. 2016


Nonuniversality due to inhomogeneous stress in semiconductor surface nanopatterning by low-energy ion-beam irradiation. PHYSICAL REVIEW B. 91:1-12. 2015
Nucleation kinetics of SrTiO3 3D islands and nanorings on Si substrates. Nanoscale. 6:13188-13195. 2014


MOCVD-Grown GaP/Si Subcells for Integrated III&-V/Si Multijunction Photovoltaics. IEEE Journal of Photovoltaics. 4:972-980. 2014


Synthesis and characterization of Fe-B nanoparticles for potential magnetic applications. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. 25:659-663. 2014


Effect of annealing atmosphere in the properties of GaAs layers deposited by sputtering techniques on Si substrates. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. 25:134-139. 2014


Modified energetics and growth kinetics on H-terminated GaAs (110). JOURNAL OF CHEMICAL PHYSICS. 139. 2013

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